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1mx36 & 2mx18 pipelined n t ram tm - 1 - rev 2.0 nov. 2003 K7N321801M k7n323601m document title 1mx36 & 2mx18-bit pipelined n t ram tm the attached data sheets are prepared and approved by samsung electronics. samsung electronics co., ltd. reserve the right to c hange the specifications. samsung electronics will evaluate and reply to your requests and questions on the parameters of this device. if you have any ques- tions, please contact the samsung branch office near your office, call or contact headquarters. revision history rev. no. 0.0 0.1 0.2 0.3 0.4 0.5 1.0 1.1 2.0 remark preliminary preliminary preliminary preliminary preliminary preliminary final final final history 1. initial document. 1. add 165fbga package 1. update jtag scan order 2. speed bin merge. from k7n3236(18)09m to k7n3236(18)01m 3. ac parameter change. toh(min)/tlzc(min) from 0.8 to 1.5 at -25 toh(min)/tlzc(min) from 1.0 to 1.5 at -22 toh(min)/tlzc(min) from 1.0 to 1.5 at -20 1. change pin out for 165fbga - x18/x36 ; 11b => from a to nc , 2r ==> from nc to a 1. insert pin at jtag scan order of 165fbga in connection with pin out change - x18/x36 ; insert pin id of 2r to bit number of 69 1. add icc, isb, isb1 and isb2 values. 1. final datasheet release. 1. change the stand-by current (isb) before after isb - 25 : 120 170 - 22 : 110 160 - 20 : 100 150 - 16 : 90 140 - 15 : 90 140 - 13 : 90 140 isb1 : 90 110 isb2 : 80 100 1. delete the 119bga package 2. delete the 225mhz and 150mhz speed bin draft date may. 10. 2001 aug. 29. 2001 dec. 31. 2001 feb. 14. 2002 apr. 20. 2002 may. 10. 2002 sep. 26. 2002 oct. 17, 2003 nov. 18, 2003
1mx36 & 2mx18 pipelined n t ram tm - 2 - rev 2.0 nov. 2003 K7N321801M k7n323601m 32mb ntram(flow through / pipelined) ordering informa tion org. part number mode vdd speed ft ; access time(ns) pipelined ; cycle time(mhz) pkg temp 2mx18 k7m321825m-qc75 flowthrough 3.3 7.5ns q:100tqfp f:165fbga c (commercial temperature range) K7N321801M-q(f)c25/20/16/13 pipelined 3.3 250/200/167/133mhz k7n321845m-q(f)c25/20/16/13 pipelined 2.5 250/200/167/133mhz 1mx36 k7m323625m-qc75 flowthrough 3.3 7.5ns k7n323601m-q(f)c25/20/16/13 pipelined 3.3 250/200/167/133mhz k7n323645m-q(f)c25/20/16/13 pipelined 2.5 250/200/167/133mhz
1mx36 & 2mx18 pipelined n t ram tm - 3 - rev 2.0 nov. 2003 K7N321801M k7n323601m 1mx36 & 2mx18-bit pipelined n t ram tm the k7n323601m and K7N321801M are 37,748,736-bits synchronous static srams. the n t ram tm , or no turnaround random access memory uti- lizes all the bandwidth in any combination of operating cycles. address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. burst order control must be tied "high or low". asynchronous inputs include the sleep mode enable(zz). output enable controls the outputs at any given time. write cycles are internally self-timed and initiated by the rising edge of the clock input. this feature eliminates complex off-chip write pulse generation and provides increased timing flexibility for incoming signals. for read cycles, pipelined sram output data is temporarily stored by an edge triggered output register and then released to the output buffers at the next rising edge of clock. the k7n323601m and K7N321801M are implemented with samsung s high performance cmos technology and is avail- able in 100pin tqfp and 165fbga packages. multiple power and ground pins minimize ground bounce. general description features logic block diagram ? 3.3v+0.165v/-0.165v power supply. ? i/o supply voltage 3.3v+0.165v/-0.165v for 3.3v i/o or 2.5v+0.4v/-0.125v for 2.5v i/o. ? byte writable function. ? enable clock and suspend operation. ? single read/write control pin. ? self-timed write cycle. ? three chip enable for simple depth expansion with no da ta- contention . ? a interleaved burst or a linear burst mode. ? asynchronous output enable control. ? power down mode. ? 100-tqfp-1420a . ? 165fbga(11x15 ball aray) with body size of 15mmx17mm. fast access times parameter symbol -25 -20 -16 -13 unit cycle time tcyc 4.0 5.0 6.0 7.5 ns clock access time tcd 2.6 3.2 3.5 4.2 ns output enable access time toe 2.6 3.2 3.5 4.2 ns we bw x clk cke cs 1 cs 2 cs 2 adv oe zz dqa 0 ~ dqd 7 or dqa 0 ~ dqb 8 address address register c o n t r o l l o g i c a 0 ~a 1 36 or 18 dqpa ~ dqpd output buffer register data-in register data-in register k k k register burst address counter write address register write control logic c o n t r o l r e g i s t e r k a [0:19]or a [0:20] lbo a 2 ~a 19 or a 2 ~a 20 a 0 ~a 1 (x=a,b,c,d or a,b) 1mx36, 2mx18 memory array n t ram tm and no turnaround random access memory are trademarks of samsung.
1mx36 & 2mx18 pipelined n t ram tm - 4 - rev 2.0 nov. 2003 K7N321801M k7n323601m pin configuration (top view) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 100 pin tqfp (20mm x 14mm) dqpc dqc 0 dqc 1 v ddq v ssq dqc 2 dqc 3 dqc 4 dqc 5 v ssq v ddq dqc 6 dqc 7 v dd v dd v dd v ss dqd 0 dqd 1 v ddq v ssq dqd 2 dqd 3 dqd 4 dqd 5 v ssq v ddq dqd 6 dqd 7 dqpd 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 dqpb dqb 7 dqb 6 v ddq v ssq dqb 5 dqb 4 dqb 3 dqb 2 v ssq v ddq dqb 1 dqb 0 v ss v dd v dd zz dqa 7 dqa 6 v ddq v ssq dqa 5 dqa 4 dqa 3 dqa 2 v ssq v ddq dqa 1 dqa 0 dqpa 1 0 0 9 9 9 8 9 7 9 6 9 5 9 4 9 3 9 2 9 1 9 0 8 9 8 8 8 7 8 6 8 5 8 4 8 3 8 2 a 6 a 7 c s 1 c s 2 b w d b w c b w b b w a c s 2 v d d v s s c l k w e c k e o e a d v a 1 8 a 1 7 a 8 8 1 a 9 5 0 4 9 4 8 4 7 4 6 4 5 4 4 4 3 4 2 4 1 4 0 3 9 3 8 3 7 3 6 3 5 3 4 3 3 3 2 a 1 6 a 1 5 a 1 4 a 1 3 a 1 2 a 1 1 a 1 0 a 1 9 n . c . v d d v s s n . c . n . c . a 0 a 1 a 2 a 3 a 4 a 5 3 1 l b o pin name note : 1. a 0 and a 1 are the two least significant bits(lsb) of the address field and set the internal burst counter if burst is desired. symbol pin name tqfp pin no. symbol pin name tqfp pin no. a 0 - a 1 9 adv we clk cke cs 1 cs 2 cs 2 bw x (x=a,b,c,d) oe zz lbo address inputs address advance/load read/write control input clock clock enable chip select chip select chip select byte write inputs output enable power sleep mode burst mode control 32,33,34,35,36,37, 43, 44,45,46,47,48,49, 50, 81,82,83,84,99,100 85 88 89 87 98 97 92 93,94,95,96 86 64 31 v dd v ss n.c. dqa 0 ~a 7 dqb 0 ~b 7 dqc 0 ~c 7 dqd 0 ~d 7 dqpa~p d v ddq v ssq power supply(+3.3v) ground no connect data inputs/outputs data inputs/outputs data inputs/outputs data inputs/outputs data inputs/outputs output power supply (3.3v or 2.5v) output ground 14,15,16,41,65,66,91 17,40,67,90 38,39,42 52,53,56,57,58,59,62,63 68,69,72,73,74,75,78,79 2,3,6,7,8,9,12,13 18,19,22,23,24,25,28,29 51,80,1,30 4,11,20,27,54,61,70,77 5,10,21,26,55,60,71,76 k7n323601m(1mx36)
1mx36 & 2mx18 pipelined n t ram tm - 5 - rev 2.0 nov. 2003 K7N321801M k7n323601m pin configuration (top view) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 100 pin tqfp (20mm x 14mm) n.c. n.c. n.c. v ddq v ssq n.c. n.c. dqb 8 dqb 7 v ssq v ddq dqb 6 dqb 5 v dd v dd v dd v ss dqb 4 dqb 3 v ddq v ssq dqb 2 dqb 1 dqb 0 n.c. v ssq v ddq n.c. n.c. n.c. 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 a 10 n.c. n.c. v ddq v ssq n.c. dqa 0 dqa 1 dqa 2 v ssq v ddq dqa 3 dqa 4 v ss v dd v dd zz dqa 5 dqa 6 v ddq v ssq dqa 7 dqa 8 n.c. n.c. v ssq v ddq n.c. n.c. n.c. 1 0 0 9 9 9 8 9 7 9 6 9 5 9 4 9 3 9 2 9 1 9 0 8 9 8 8 8 7 8 6 8 5 8 4 8 3 8 2 a 6 a 7 c s 1 c s 2 b w b b w a c s 2 v d d v s s c l k w e c k e o e a d v a 1 9 a 1 8 a 8 8 1 a 9 5 0 4 9 4 8 4 7 4 6 4 5 4 4 4 3 4 2 4 1 4 0 3 9 3 8 3 7 3 6 3 5 3 4 3 3 3 2 a 1 7 a 1 6 a 1 5 a 1 4 a 1 3 a 1 2 a 1 1 a 2 0 n . c . v d d v s s n . c . n . c . a 0 a 1 a 2 a 3 a 4 a 5 3 1 l b o K7N321801M(2mx18) n . c . n . c . pin name n ote : a 0 and a 1 are the two least significant bits(lsb) of the address field and set the internal burst counter if burst is desired. symbol pin name tqfp pin no. symbol pin name tqfp pin no. a 0 - a 20 adv we clk cke cs 1 cs 2 cs 2 bw x (x=a,b) oe zz lbo address inputs address advance/load read/write control input clock clock enable chip select chip select chip select byte write inputs output enable power sleep mode burst mode control 32,33,34,35,36,37, 43 44,45,46,47,48,49,50, 80,81,82,83,84,99,100 85 88 89 87 98 97 92 93,94 86 64 31 v dd v ss n.c. dqa 0 ~a 8 dqb 0 ~b 8 v ddq v ssq power supply(+3.3v) ground no connect data inputs/outputs data inputs/outputs output power supply (3.3v or 2.5v) output ground 14,15,16,41,65,66,91 17,40,67,90 1,2,3,6,7,25,28,29,30, 38,39,42,51,52,53, 56,57,75,78,79,95,96 58,59,62,63,68,69,72,73,74 8,9,12,13,18,19,22,23,24 4,11,20,27,54,61,70,77 5,10,21,26,55,60,71,76
1mx36 & 2mx18 pipelined n t ram tm - 6 - rev 2.0 nov. 2003 K7N321801M k7n323601m 165-pin fbga package configurations (top view) pin name symbol pin name symbol pin name a a 0 ,a 1 adv we clk cke cs 1 cs 2 cs 2 bw x (x=a,b,c,d) oe zz lbo tck tms tdi tdo address inputs burst address inputs address advance/load read/write control input clock clock enable chip select chip select chip select byte write inputs output enable power sleep mode burst mode control jtag test clock jtag test mode select jtag test data input jtag test data output v dd v ss n.c. dqa dqb dqc dqd dqpa~pd v ddq power supply ground no connect data inputs/outputs data inputs/outputs data inputs/outputs data inputs/outputs data inputs/outputs output power supply k7n323601m(1mx36) note : * a 0 and a 1 are the two least significant bits(lsb) of the address field and set the internal burst counter if burst is desired. 1 2 3 4 5 6 7 8 9 10 11 a nc a cs 1 bw c bw b cs 2 cke adv a a nc b nc a cs2 bw d bw a clk we oe a a nc c dqpc nc v ddq v ss v ss v ss v ss v ss v ddq nc dqpb d dqc dqc v ddq v dd v ss v ss v ss v dd v ddq dqb dqb e dqc dqc v ddq v dd v ss v ss v ss v dd v ddq dqb dqb f dqc dqc v ddq v dd v ss v ss v ss v dd v ddq dqb dqb g dqc dqc v ddq v dd v ss v ss v ss v dd v ddq dqb dqb h nc v dd nc v dd v ss v ss v ss v dd nc nc zz j dqd dqd v ddq v dd v ss v ss v ss v dd v ddq dqa dqa k dqd dqd v ddq v dd v ss v ss v ss v dd v ddq dqa dqa l dqd dqd v ddq v dd v ss v ss v ss v dd v ddq dqa dqa m dqd dqd v ddq v dd v ss v ss v ss v dd v ddq dqa dqa n dqpd nc v ddq v ss nc nc nc v ss v ddq nc dqpa p nc nc a a tdi a 1 * tdo a a a nc r lbo a a a tms a 0 * tck a a a a
1mx36 & 2mx18 pipelined n t ram tm - 7 - rev 2.0 nov. 2003 K7N321801M k7n323601m pin name symbol pin name symbol pin name a a 0 ,a 1 adv we clk cke cs 1 cs 2 cs 2 bw x (x=a,b) oe zz lbo tck tms tdi tdo address inputs burst address inputs address advance/load read/write control input clock clock enable chip select chip select chip select byte write inputs output enable power sleep mode burst mode control jtag test clock jtag test mode select jtag test data input jtag test data output v dd v ss n.c. dqa dqb dqpa, pb v ddq power supply ground no connect data inputs/outputs data inputs/outputs data inputs/outputs output power supply 165-pin fbga package configurations (top view) K7N321801M(2mx18) note : * a 0 and a 1 are the two least significant bits(lsb) of the address field and set the internal burst counter if burst is desired. 1 2 3 4 5 6 7 8 9 10 11 a nc a cs 1 bw b nc cs 2 cke adv a a a b nc a cs2 nc bw a clk we oe a a nc c nc nc v ddq v ss v ss v ss v ss v ss v ddq nc dqpa d nc dqb v ddq v dd v ss v ss v ss v dd v ddq nc dqa e nc dqb v ddq v dd v ss v ss v ss v dd v ddq nc dqa f nc dqb v ddq v dd v ss v ss v ss v dd v ddq nc dqa g nc dqb v ddq v dd v ss v ss v ss v dd v ddq nc dqa h nc v dd nc v dd v ss v ss v ss v dd nc nc zz j dqb nc v ddq v dd v ss v ss v ss v dd v ddq dqa nc k dqb nc v ddq v dd v ss v ss v ss v dd v ddq dqa nc l dqb nc v ddq v dd v ss v ss v ss v dd v ddq dqa nc m dqb nc v ddq v dd v ss v ss v ss v dd v ddq dqa nc n dqpb nc v ddq v ss nc nc nc v ss v ddq nc nc p nc nc a a tdi a 1 * tdo a a a nc r lbo a a a tms a 0 * tck a a a a
1mx36 & 2mx18 pipelined n t ram tm - 8 - rev 2.0 nov. 2003 K7N321801M k7n323601m function description the k7n323601m and K7N321801M are n t ram tm designed to sustain 100% bus bandwidth by eliminating turnaround cycle when there is transition from read to write, or vice versa. all inputs (with the exception of oe , lbo and zz) are synchronized to rising clock edges. all read, write and deselect cycles are initiated by the adv input. subsequent burst addresses can be internally generated by th e burst advance pin (adv). adv should be driven to low once the device has been deselected in order to load a new address for next operation. clock enable( cke ) pin allows the operation of the chip to be suspended as long as necessary. when cke is high, all synchronous inputs are ignored and the internal device registers will hold their previous values. n t ram tm latches external address and initiates a cycle, when cke , adv are driven to low and all three chip enables( cs 1 , cs 2 , cs 2 ) are active . output enable( oe ) can be used to disable the output at any given time. read operation is initiated when at the rising edge of the clock, the address presented to the address inputs are latched in the address register, cke is driven low, all three chip enables( cs 1 , cs 2 , cs 2 ) are active, the write enable input signals we are driven high, and adv driven low.the internal array is read between the first rising edge and the second rising edge of the clock and th e data is latched in the output register. at the second clock edge the data is driven out of the sram. also during read operation oe must be driven low for the device to drive out the requested data. write operation occurs when we is driven low at the rising edge of the clock. bw [d:a] can be used for byte write operation. the pipe- lined n t ram tm uses a late-late write cycle to utilize 100% of the bandwidth. at the first rising edge of the clock, we and address are registered, and the data associated with that address is required two cycle later. subsequent addresses are generated by adv high for the burst access as shown below. the starting point of the burst seguence is provided by the external address. the burst address counter wraps around to its initial state upon completion. the burst sequence is determined by the state of the lbo pin. when this pin is low, linear burst sequence is selected. and when this pin is high, interleaved burst sequence is selected. during normal operation, zz must be driven low. when zz is driven high, the sram will enter a power sleep mode after 2 cycles. a t this time, internal state of the sram is preserved. when zz returns to low, the sram normally operates after 2 cycles of wake up time . burst sequence table (interleaved burst, lbo =high) lbo pin high case 1 case 2 case 3 case 4 a 1 a 0 a 1 a 0 a 1 a 0 a 1 a 0 first address fourth address 0 0 1 1 0 1 0 1 0 0 1 1 1 0 1 0 1 1 0 0 0 1 0 1 1 1 0 0 1 0 1 0 bq table (linear burst, lbo =low) note : 1. lbo pin must be tied to high or low, and floating state must not be allowed . lbo pin low case 1 case 2 case 3 case 4 a 1 a 0 a 1 a 0 a 1 a 0 a 1 a 0 first address fourth address 0 0 1 1 0 1 0 1 0 1 1 0 1 0 1 0 1 1 0 0 0 1 0 1 1 0 0 1 1 0 1 0
1mx36 & 2mx18 pipelined n t ram tm - 9 - rev 2.0 nov. 2003 K7N321801M k7n323601m state diagram for n t ram tm begin write burst write begin read write d s r e a d burst read d s w r i t e d s read d s r e a d d s w r i t e b u r s t deselect b u r s t r e a d b u r s t w r i t e read write burst burst notes : 1. an ignore clock edge cycle is not shown is the above diagram. this is because cke high only blocks the clock(clk) input and does not change the state of the device. 2. states change on the rising edge of the clock(clk) command action ds deselect read begin read write begin write burst begin read begin write continue deselect
1mx36 & 2mx18 pipelined n t ram tm - 10 - rev 2.0 nov. 2003 K7N321801M k7n323601m synchronous truth table note s : 1. x means "don t care". 2. the rising edge of clock is symbolized by ( - ). 3. a continue deselect cycle can only be enterd if a deselect cycle is executed first. 4. write = l means write operation in write truth table. write = h means read operation in write truth table. 5. operation finally depends on status of asynchronous input pins(zz and oe ). cs 1 cs 2 cs 2 adv we bw x oe cke clk address accessed operation h x x l x x x l - n/a not selected x l x l x x x l - n/a not selected x x h l x x x l - n/a not selected x x x h x x x l - n/a not selected continue l h l l h x l l - external address begin burst read cycle x x x h x x l l - next address continue burst read cycle l h l l h x h l - external address nop/dummy read x x x h x x h l - next address dummy read l h l l l l x l - external address begin burst write cycle x x x h x l x l - next address continue burst write cycle l h l l l h x l - n/a nop/write abort x x x h x h x l - next address write abort x x x x x x x h - current address ignore clock write truth table (x36) notes : 1. x means "don t care". 2. all inputs in this table must meet setup and hold time around the rising edge of clk( - ). we bw a bw b bw c bw d operation h x x x x read l l h h h write byte a l h l h h write byte b l h h l h write byte c l h h h l write byte d l l l l l write all bytes l h h h h write abort/nop truth tables write truth table (x18) n otes : 1. x means "don t care". 2. all inputs in this table must meet setup and hold time around the rising edge of clk( - ). we bw a bw b operation h x x read l l h write byte a l h l write byte b l l l write all bytes l h h write abort/nop
1mx36 & 2mx18 pipelined n t ram tm - 11 - rev 2.0 nov. 2003 K7N321801M k7n323601m asynchronous truth table operation zz oe i/o status sleep mode h x high-z read l l dq l h high-z write l x din, high-z deselected l x high-z note s 1. x means "don t care". 2 . sleep mode means power sleep mode of which stand-by current does not depend on cycle time. 3 . deselected means power sleep mode of which stand-by current depends on cycle time. absolute maximum ratings* *note : stresses greater than those listed under "absolute maximum ratings" may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect reliability. parameter symbol rating unit voltage on v dd supply relative to v ss v dd -0.3 to 4.6 v voltage on any other pin relative to v ss v in -0.3 to v dd +0.3 v power dissipation p d 1.6 w storage temperature t stg -65 to 150 c operating temperature t opr 0 to 70 c storage temperature range under bias t bias -10 to 85 c operating conditions at 3.3v i/o (0 c t a 70 c) parameter symbol min typ. max unit supply voltage v dd 3.135 3.3 3.465 v v ddq 3.135 3.3 3.465 v ground v ss 0 0 0 v capacitance* (t a =25 c, f=1mhz) *note s : sampled not 100% tested. parameter symbol test condition typ max unit input capacitance c in v in =0v - 5 pf output capacitance c out v out =0v - 7 pf operating conditions at 2.5v i/o (0 c t a 70 c) parameter symbol min typ. max unit supply voltage v dd 3.135 3.3 3.465 v v ddq 2.375 2.5 2.9 v ground v ss 0 0 0 v
1mx36 & 2mx18 pipelined n t ram tm - 12 - rev 2.0 nov. 2003 K7N321801M k7n323601m dc electrical characteristics (v dd =3.3v+0.165v/-0.165v , t a =0 c to +70 c) notes : 1. reference ac operating conditions and characteristics for input and timing. 2. data states are all zero. 3. in case of i/o pins, the max. v ih =v ddq +0.3v parameter symbol test conditions min max unit notes input leakage current(except zz) i il v dd =max ; v in =v ss to v dd -2 +2 m a output leakage current i ol output disabled, v out =v ss to v ddq -2 +2 m a operating current i cc device selected, i out =0ma, zz v il , cycle time 3 t cyc min -25 - 460 ma 1,2 -20 - 410 -16 - 360 -13 - 310 standby current i sb device deselected, i out =0ma, zz v il , f=max, all inputs 0.2v or 3 v dd -0.2v -25 - 170 ma -20 - 150 -16 - 140 -13 - 140 i sb1 device deselected, i out =0ma, zz 0.2v, f=0, all inputs=fixed (v dd -0.2v or - 110 ma i sb2 device deselected, i out =0ma, zz 3 v dd -0.2v, f=max, all inputs v il or 3 v ih - 100 ma output low voltage(3.3v i/o) v ol i ol =8.0ma - 0.4 v output high voltage(3.3v i/o) v oh i oh =-4.0ma 2.4 - v output low voltage(2.5v i/o) v ol i ol =1.0ma - 0.4 v output high voltage(2.5v i/o) v oh i oh =-1.0ma 2.0 - v input low voltage(3.3v i/o) v il -0.3* 0.8 v input high voltage(3.3v i/o) v ih 2.0 v dd +0.3** v 3 input low voltage(2.5v i/o) v il -0.3* 0.7 v input high voltage(2.5v i/o) v ih 1.7 v dd +0.3** v 3 (v dd =3.3v+0.165v/-0.165v , v ddq =3.3v+0.165/-0.165v or v dd =3.3v+0.165v/-0.165v , v ddq =2.5v+0.4v/-0.125v, t a =0to70 c) test conditions parameter value input pulse level(for 3.3v i/o) 0 to 3.0v input pulse level(for 2.5v i/o) 0 to 2.5v input rise and fall time(measured at 20% to 80% for 3.3v i/o) 1.0v/ns input rise and fall time(measured at 20% to 80% for 2.5v i/o) 1.0v/ns input and output timing reference levels for 3.3v i/o 1.5v input and output timing reference levels for 2.5v i/o v ddq /2 output load see fig. 1 v ss v ih v ss- 1.0v 20% t cyc (min)
1mx36 & 2mx18 pipelined n t ram tm - 13 - rev 2.0 nov. 2003 K7N321801M k7n323601m ac timing characteristics (v dd =3.3v+0.165v/-0.165v, t a =0 to 70 c) note s : 1. all address inputs must meet the specified setup and hold times for all rising clock(clk) edges when adv is sampled low and cs is sampled low. all other synchronous inputs must meet the specified setup and hold times whenever this device is chip selected. 2. chip selects must be valid at each rising edge of clk(when adv is low) to remain enabled. 3. a write cycle is defined by we low having been registered into the device at adv low, a read cycle is defined by we high with adv low, both cases must meet setup and hold times. 4. to avoid bus contention, at a given voltage and temperature t lzc is more than t hzc. the specs as shown do not imply bus contention because t lzc is a min. parameter that is worst case at totally different test conditions (0 c,3.465v) than t hzc , which is a max. parameter(worst case at 70 c,3.135v) it is not possible for two srams on the same board to be at such different voltage and temperature. parameter symbol -25 -20 -16 - 13 unit min max min max min max min max cycle time t cyc 4.0 - 5.0 - 6.0 - 7.5 - ns clock access time t cd - 2.6 - 3.2 - 3.5 - 4.2 ns output enable to data valid t oe - 2.6 - 3.2 - 3.5 - 4.2 ns clock high to output low-z t lzc 1.5 - 1.5 - 1.5 - 1.5 - ns output hold from clock high t oh 1.5 - 1.5 - 1.5 - 1.5 - ns output enable low to output low-z t lzoe 0 - 0 - 0 - 0 - ns output enable high to output high-z t hzoe - 2.6 - 3.0 - 3.0 - 3.5 ns clock high to output high-z t hzc - 2.6 - 3.0 - 3.0 - 3.5 ns clock high pulse width t ch 1.7 - 2.0 - 2.2 - 3.0 - ns clock low pulse width t cl 1.7 - 2.0 - 2.2 - 3.0 - ns address setup to clock high t as 1.2 - 1.4 - 1.5 - 1.5 - ns cke setup to clock high t ces 1.2 - 1.4 - 1.5 - 1.5 - ns data setup to clock high t ds 1.2 - 1.4 - 1.5 - 1.5 - ns write setup to clock high ( we , bw x ) t ws 1.2 - 1.4 - 1.5 - 1.5 - ns address advance setup to clock high t advs 1.2 - 1.4 - 1.5 - 1.5 - ns chip select setup to clock high t css 1.2 - 1.4 - 1.5 - 1.5 - ns address hold from clock high t ah 0.3 - 0.4 - 0.5 - 0.5 - ns cke hold from clock high t ceh 0.3 - 0.4 - 0.5 - 0.5 - ns data hold from clock high t dh 0.3 - 0.4 - 0.5 - 0.5 - ns write hold from clock high ( we , bw x ) t wh 0.3 - 0.4 - 0.5 - 0.5 - ns address advance hold from clock high t advh 0.3 - 0.4 - 0.5 - 0.5 - ns chip select hold from clock high t csh 0.3 - 0.4 - 0.5 - 0.5 - ns zz high to power down t pds 2 - 2 - 2 - 2 - cycle zz low to power up t pus 2 - 2 - 2 - 2 - cycle output load(b), (for t lzc , t lzoe , t hzoe & t hzc ) dout 353 w / 1538 w 5pf* +3.3v for 3.3v i/o 319 w / 1667 w fig. 1 * including scope and jig capacitance output load(a) dout zo=50 w rl=50 w vl=1.5v for 3.3v i/o v ddq /2 for 2.5v i/o /+2.5v for 2.5v i/o 30pf*
1mx36 & 2mx18 pipelined n t ram tm - 14 - rev 2.0 nov. 2003 K7N321801M k7n323601m sleep mode sleep mode is a low current, power-down mode in which the device is deselected and current is reduced to i sb2 . the duration of sleep mode is dictated by the length of time the zz is in a high state. after entering sleep mode, all inputs except zz become disabled and all outputs go to high-z the zz pin is an asynchronous, active high input that causes the device to enter sleep mode. when the zz pin becomes a logic high, i sb2 is guaranteed after the time t zzi is met. any operation pending when entering sleep mode is not guaranteed to successful complete. therefore, sleep mode (read or write) must not be initiated until valid pend- ing operations are completed. similarly, when exiting sleep mode during t pus , only a deselect or read cycle should be given while the sram is transitioning out of sleep mode. sleep mode electrical characteristics description conditions symbol min max units current during sleep mode zz 3 v ih i sb2 60 ma zz active to input ignored t pds 2 cycle zz inactive to input sampled t pus 2 cycle zz active to sleep current t zzi 2 cycle zz inactive to exit sleep current t rzzi 0 k t pds zz setup cycle t rzzi zz isupply all inputs (except zz) outputs (q) t zzi t pus zz recovery cycle deselect or read only high-z don t care i sb2 sleep mode waveform normal operation cycle deselect or read only
1mx36 & 2mx18 pipelined n t ram tm - 15 - rev 2.0 nov. 2003 K7N321801M k7n323601m ieee 1149.1 test access port and boundary scan-jtag this part contains an ieee standard 1149.1 compatible test access port(tap). the package pads are monitored by the serial scan circuitry when in test mode. this is to support connectivity testing during manufacturing and system diagnostics. internal data is not driven out of the sram under jtag control. in conformance with ieee 1149.1, the sram contains a tap controller, instruction reg- ister, bypass register and id register. the tap controller has a standard 16-state machine that resets internally upon power-up, therefore, trst signal is not required. it is possible to use this device without utilizing the tap. to disable the tap controll er without interfacing with normal operation of the sram, tck must be tied to v ss to preclude mid level input. tms and tdi are designed so an undriven input will produce a response identical to the application of a logic 1, and may be left unconnected. but they may also be tied to v dd through a resistor. tdo should be left unconnected. tap controller state diagram jtag block diagram sram core bypass reg. identification reg. instruction reg. control signals tap controller tdo tdi tms tck test logic reset run test idle 0 1 1 1 1 0 0 0 1 0 1 1 0 0 0 1 0 1 1 1 0 0 0 0 0 0 0 select dr capture dr shift dr exit1 dr pause dr exit2 dr update dr select ir capture ir shift ir exit1 ir pause ir exit2 ir update ir 1 1 1 1 1 jtag instruction coding note : 1. places dqs in hi-z in order to sample all input data regardless of other sram inputs. this instruction is not ieee 1149.1 compliant. 2. places dqs in hi-z in order to sample all input data regardless of other sram inputs. 3. tdi is sampled as an input to the first id register to allow for the serial shift of the external tdi data. 4. bypass register is initiated to v ss when bypass instruction is invoked. the bypass register also holds serially loaded tdi when exiting the shift dr states. 5. sample instruction dose not places dqs in hi-z. 6. this instruction is reserved for future use. ir2 ir1 ir0 instruction tdo output notes 0 0 0 extest boundary scan register 1 0 0 1 idcode identification register 3 0 1 0 sample-z boundary scan register 2 0 1 1 bypass bypass register 4 1 0 0 sample boundary scan register 5 1 0 1 reserved do not use 6 1 1 0 bypass bypass register 4 1 1 1 bypass bypass register 4
1mx36 & 2mx18 pipelined n t ram tm - 16 - rev 2.0 nov. 2003 K7N321801M k7n323601m note : 1. nc and vss pins included in the scan exit order are read as "x" ( i.e. don t care). bit pin id(x18) pin id(x36) 40 6a 6a 41 5b 5b 42 5a 5a 43 4a 4a 44 4b 4b 45 3b 3b 46 3a 3a 47 2a 2a 48 2b 2b 49 1b 1b 50 1a 1a 51 1c 1c 52 1d 1d 53 1e 1e 54 1f 1f 55 1g 1g 56 2d 2d 57 2e 2e 58 2f 2f 59 2g 2g 60 1j 1j 61 1k 1k 62 1l 1l 63 1m 1m 64 1n 2j 65 2k 2k 66 2l 2l 67 2m 2m 68 2j 1n 69 2r 2r 70 1r 1r 71 3p 3p 72 3r 3r 73 4r 4r 74 4p 4p 75 6p 6p 76 6r 6r bit pin id(x18) pin id(x36) 1 6n 6n 2 8p 8p 3 8r 8r 4 9r 9r 5 9p 9p 6 10p 10p 7 10r 10r 8 11r 11r 9 11p 11p 10 11h 11h 11 11n 11n 12 11m 11m 13 11l 11l 14 11k 11k 15 11j 11j 16 10m 10m 17 10l 10l 18 10k 10k 19 10j 10j 20 11g 11g 21 11f 11f 22 11e 11e 23 11d 11d 24 11c 10g 25 10f 10f 26 10e 10e 27 10d 10d 28 10g 11c 29 11a 11a 30 11b 11b 31 10a 10a 32 10b 10b 33 9a 9a 34 9b 9b 35 8a 8a 36 8b 8b 37 7a 7a 38 7b 7b 39 6b 6b boundary scan exit order id register definition part revision number (31:28) part configuration (27:18) vendor definition (17:12) samsung jedec code (11: 1) start bit(0) 1mx36 0000 01000 00100 xxxxxx 00001001110 1 2mx18 0000 01001 00011 xxxxxx 00001001110 1 scan register definition part instruction register bypass register id register boundary scan 1mx36 3 bits 1 bits 32 bits 76 bits 2mx18 3 bits 1 bits 32 bits 76 bits scan information (165 fbga )
1mx36 & 2mx18 pipelined n t ram tm - 17 - rev 2.0 nov. 2003 K7N321801M k7n323601m jtag dc operating conditions note : the input level of sram pin is to follow the sram dc specification . parameter symbol min typ max unit note power supply voltage v dd 3.135 3.3 3.465 v input high level ( 3.3v i/o / 2.5v i/o ) v ih 2.0 / 1.7 - v dd +0.3 v input low level ( 3.3v i/o / 2.5v i/o ) v il -0.3 - 0.8 / 0.7 v output high voltage( 3.3v i/o / 2.5v i/o ) v oh 2.4 / 2.0 - - v output low voltage( 3.3v i/o / 2.5v i/o ) v ol - - 0.4 / 0.4 v jtag timing diagram jtag ac characteristics parameter symbol min max unit note tck cycle time t chch 50 - ns tck high pulse width t chcl 20 - ns tck low pulse width t clch 20 - ns tms input setup time t mvch 5 - ns tms input hold time t chmx 5 - ns tdi input setup time t dvch 5 - ns tdi input hold time t chdx 5 - ns sram input setup time t svch 5 - ns sram input hold time t chsx 5 - ns clock low to output valid t clqv 0 10 ns jtag ac test conditions parameter symbol min unit note input high/low level( 3.3v i/o , 2.5v i/o ) v ih /v il 3.0/0 , 2.5/0 v input rise/fall time( 3.3v i/o , 2.5v i/o ) tr/tf 1.0/1.0 , 1.0/1.0 ns input and output timing reference level v ddq /2 v tck tms tdi pi t chch t mvch t chmx t chcl t clch t dvch t chdx t clqv tdo (sram) t svch t chsx
1mx36 & 2mx18 pipelined n t ram tm - 18 - rev 2.0 nov. 2003 K7N321801M k7n323601m c l o c k c k e a d d r e s s w r i t e c s a d v o e d a t a o u t t i m i n g w a v e f o r m o f r e a d c y c l e n o t e s : w r i t e = l m e a n s w e = l , a n d b w x = l c s = l m e a n s c s 1 = l , c s 2 = h a n d c s 2 = l c s = h m e a n s c s 1 = h , o r c s 1 = l a n d c s 2 = h , o r c s 1 = l , a n d c s 2 = l t c h t c l t c e s t c e h t a s t a h a 1 a 2 a 3 t w s t w h t c s s t c s h t o e t h z o e t l z o e t c d t o h t h z c q 3 - 4 q 3 - 3 q 3 - 2 q 3 - 1 q 2 - 4 q 2 - 3 q 2 - 2 q 2 - 1 q 1 - 1 d o n t c a r e u n d e f i n e d t c y c t a d v s t a d v h
1mx36 & 2mx18 pipelined n t ram tm - 19 - rev 2.0 nov. 2003 K7N321801M k7n323601m t i m i n g w a v e f o r m o f w r t e c y c l e c l o c k a d d r e s s w r i t e c s a d v d a t a i n t c h t c l a 2 a 3 d 2 - 1 d 1 - 1 d 2 - 2 d 2 - 3 d 2 - 4 d 3 - 1 d 3 - 2 d 3 - 3 o e d a t a o u t t d s t d h d o n t c a r e u n d e f i n e d t c y c c k e a 1 d 3 - 4 t c e s t c e h n o t e s : w r i t e = l m e a n s w e = l , a n d b w x = l c s = l m e a n s c s 1 = l , c s 2 = h a n d c s 2 = l c s = h m e a n s c s 1 = h , o r c s 1 = l a n d c s 2 = h , o r c s 1 = l , a n d c s 2 = l q 0 - 4 t h z o e q 0 - 3
1mx36 & 2mx18 pipelined n t ram tm - 20 - rev 2.0 nov. 2003 K7N321801M k7n323601m t i m i n g w a v e f o r m o f s i n g l e r e a d / w r i t e c l o c k a d d r e s s w r i t e c s a d v o e d a t a i n t c h t c l t d s t d h d a t a o u t a 2 a 4 a 5 d 2 t o e t l z o e q 1 d o n t c a r e u n d e f i n e d t c y c c k e t c e s t c e h a 1 a 3 a 7 a 6 q 3 q 4 q 7 q 6 d 5 n o t e s : w r i t e = l m e a n s w e = l , a n d b w x = l c s = l m e a n s c s 1 = l , c s 2 = h a n d c s 2 = l c s = h m e a n s c s 1 = h , o r c s 1 = l a n d c s 2 = h , o r c s 1 = l , a n d c s 2 = l a 9 a 8
1mx36 & 2mx18 pipelined n t ram tm - 21 - rev 2.0 nov. 2003 K7N321801M k7n323601m t i m i n g w a v e f o r m o f c k e o p e r a t i o n c l o c k a d d r e s s w r i t e c s a d v o e d a t a i n t c h t c l d a t a o u t a 1 a 2 a 3 a 4 a 5 t c e s t c e h d o n t c a r e u n d e f i n e d t c y c c k e t d s t d h d 2 q 4 q 1 n o t e s : w r i t e = l m e a n s w e = l , a n d b w x = l c s = l m e a n s c s 1 = l , c s 2 = h a n d c s 2 = l c s = h m e a n s c s 1 = h , o r c s 1 = l a n d c s 2 = h , o r c s 1 = l , a n d c s 2 = l t c d t l z c t h z c q 3 a 6
1mx36 & 2mx18 pipelined n t ram tm - 22 - rev 2.0 nov. 2003 K7N321801M k7n323601m t i m i n g w a v e f o r m o f c s o p e r a t i o n c l o c k a d d r e s s w r i t e c s a d v o e d a t a i n t c h t c l d a t a o u t a 1 a 2 a 3 a 4 a 5 d o n t c a r e u n d e f i n e d t c y c c k e d 5 q 4 t c e s t c e h q 1 q 2 t o e t l z o e d 3 t c d t l z c n o t e s : w r i t e = l m e a n s w e = l , a n d b w x = l c s = l m e a n s c s 1 = l , c s 2 = h a n d c s 2 = l c s = h m e a n s c s 1 = h , o r c s 1 = l a n d c s 2 = h , o r c s 1 = l , a n d c s 2 = l t h z c t d h t d s
1mx36 & 2mx18 pipelined n t ram tm - 23 - rev 2.0 nov. 2003 K7N321801M k7n323601m package dimensions 0.10 max 0~8 22.00 0.30 20.00 0.20 16.00 0.30 14.00 0.20 1.40 0.10 1.60 max 0.05 min (0.58) 0.50 0.10 #1 (0.83) 0.50 0.10 100-tqfp-1420a 0.65 0.30 0.10 0.10 max + 0.10 - 0.05 0.127 units ; millimeters/inches
1mx36 & 2mx18 pipelined n t ram tm - 24 - rev 2.0 nov. 2003 K7N321801M k7n323601m 165 fbga package dimensions c side view 15mm x 17mm body, 1.0mm bump pitch, 11x15 ball array f a ? h g b bottom view top view a b d e e symbol value units note symbol value units note a 17 0.1 mm e 1.0 mm b 15 0.1 mm f 14.0 mm c 1.3 0.1 mm g 10.0 mm d 0.35 0.05 mm h 0.5 0.05 mm

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